Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Abstract

Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K.

Keywords

• InAsSb
• gold electrodeposition
• TLM
• specific contact resistivity
• Hall effect measurement