The AlGaInP window layers with different growth modes of Al in (AlxGa1−x)0.5In0.5P were prepared to investigate the effect of different growth modes of Al on the photoelectric properties of red LEDs. The experimental results show that the forward voltage of (AlxGa1−x)0.5In0.5P LEDs n-window layer with the ridge gradient Al content was 30 mV (x = 0.15) and 190 mV (x = 0.45), respectively, which are lower than that of the n-window layer without ridge gradient Al content samples. Meanwhile, the light output power of the ridge gradient Al content LED is 12.3% (x = 0.15) and 3.6% (x = 0.45) higher than that of the other two samples, respectively. Compared with the Al composition ridge gradient sample, the photoelectric efficiency is 2.45% (x = 0.15) and 5.68% (x = 0.45), respectively, due to the reduction in the voltage and the increase in the light output power.
