Gm-boosted Flat Gain UWB Low Noise Amplifier with Noise Cancellation

Abstract

This paper presents a high power gain (S21) and low Noise Figure (NF) 3.1-10.6 GHz common gate (CG) CMOS ultra wideband (UWB) low noise amplifier (LNA) using active gm-boosted technology, T-match input network, self-body-bias, current reused and noise cancelling technique. Wideband input impedance matching was achieved by using the proposed T-match input network to improve the input matching at low frequencies. The proposed UWB LNA employs self-body-bias and current reused technique to decrease the total power consumption. The noise cancelling technique and active gm-boosted technology are utilized to restrain the noise generated and decrease the NF. The proposed LNA was fabricated using TSMC 0.13 µm RF CMOS technology. The simulation results show an average S21 of 22.0795 dB with a ripple of ± 0.4125 dB, reverse isolation (S12) was less than -34.15 dB, an excellent NF of 2.232-2.696 dB, input return loss (S11) was less than -15.635 dB and output return loss (S22) was less than -16.903 dB in the frequency range of 3.1-10.6 GHz. The proposed UWB LNA consumed 3.996 mW from a 1.2 V power supply.