Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Abstract

Antiferromagnets have an inbuilt resilience to external magnetic fields and intrinsically fast dynamics, properties that have garnered interest in the hope that they could be used for antiferromagnet memories. Central to this are Neel spin-orbit torques, which can switch the individual sublattices of the antiferromagnet. Here, Reimers et al demonstrate complete and reversible current induced switching of the Neel vector in Mn2Au.