Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire

Yueh-Han Chuang; Fu-Gow Tarntair; Tzu-Wei Wang; Anoop Kumar Singh; Po-Liang Liu; Dong-Sing Wuu; Hao-Chung Kuo; Xiuling Li; Ray-Hua Horng

Applied Surface Science Advances (Mar 2025)

Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire

Yueh-Han Chuang,
Fu-Gow Tarntair,
Tzu-Wei Wang,
Anoop Kumar Singh,
Po-Liang Liu,
Dong-Sing Wuu,
Hao-Chung Kuo,
Xiuling Li,
Ray-Hua Horng

Affiliations

Yueh-Han Chuang: Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Fu-Gow Tarntair: Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Tzu-Wei Wang: Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC
Anoop Kumar Singh: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROC
Po-Liang Liu: Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROC
Dong-Sing Wuu: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROC
Hao-Chung Kuo: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC
Xiuling Li: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, TX 78758, USA
Ray-Hua Horng: Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Corresponding author.

Journal volume & issue: Vol. 26
p. 100711

Abstract

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β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon.

Published in Applied Surface Science Advances

ISSN: 2666-5239 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology: Industrial electrochemistry
Website: https://www.journals.elsevier.com/applied-surface-science-advances

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