EPJ Web of Conferences (Jan 2017)

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

  • Abdul Halim N. Syafira,
  • Wahid M.Halim A.,
  • Ahmad Hambali N. Azura M.,
  • Rashid Shanise,
  • Shahimin Mukhzeer M.

DOI
https://doi.org/10.1051/epjconf/201716201037
Journal volume & issue
Vol. 162
p. 01037

Abstract

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Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.