Molecules (Oct 2021)

Significantly Improved Colossal Dielectric Properties and Maxwell—Wagner Relaxation of TiO<sub>2</sub>—Rich Na<sub>1/2</sub>Y<sub>1/2</sub>Cu<sub>3</sub>Ti<sub>4+<i>x</i></sub>O<sub>12</sub> Ceramics

  • Pariwat Saengvong,
  • Narong Chanlek,
  • Bundit Putasaeng,
  • Atip Pengpad,
  • Viyada Harnchana,
  • Sriprajak Krongsuk,
  • Pornjuk Srepusharawoot,
  • Prasit Thongbai

DOI
https://doi.org/10.3390/molecules26196043
Journal volume & issue
Vol. 26, no. 19
p. 6043

Abstract

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In this work, the colossal dielectric properties and Maxwell—Wagner relaxation of TiO2–rich Na1/2Y1/2Cu3Ti4+xO12 (x = 0–0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na1/2Y1/2Cu3Ti4O12 is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (Rgb). The colossal permittivities of ε′ ~ 0.7–1.4 × 104 with slightly dependent on frequency in the frequency range of 102–106 Hz are obtained in the TiO2–rich Na1/2Y1/2Cu3Ti4+xO12 ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016–0.020 at 1 kHz due to the increased Rgb. The semiconducting grain resistance (Rg) of the Na1/2Y1/2Cu3Ti4+xO12 ceramics increases with increasing x, corresponding to the decrease in Cu+/Cu2+ ratio. The nonlinear electrical properties of the TiO2–rich Na1/2Y1/2Cu3Ti4+xO12 ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO2–rich Na1/2Y1/2Cu3Ti4+xO12 ceramics are explained by the Maxwell–Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.

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