Impedance Spectroscopy of Encapsulated Single Graphene Layers
Rainer Schmidt,
Félix Carrascoso Plana,
Norbert Marcel Nemes,
Federico Mompeán,
Mar García-Hernández
Affiliations
Rainer Schmidt
Campo Moncloa, Grupo de Física de Materiales Complejos (GFMC), Dpto. de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
Félix Carrascoso Plana
Instituto de Ciencia de Materiales de Madrid—Consejo Superior de Investigaciones Cientificas (ICMM-CSIC), Materials Science Factory, 2D Foundry Group, Cantoblanco, 28049 Madrid, Spain
Norbert Marcel Nemes
Campo Moncloa, Grupo de Física de Materiales Complejos (GFMC), Dpto. de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
Federico Mompeán
Instituto de Ciencia de Materiales de Madrid—Consejo Superior de Investigaciones Cientificas (ICMM-CSIC), Materials Science Factory, 2D Foundry Group, Cantoblanco, 28049 Madrid, Spain
Mar García-Hernández
Instituto de Ciencia de Materiales de Madrid—Consejo Superior de Investigaciones Cientificas (ICMM-CSIC), Materials Science Factory, 2D Foundry Group, Cantoblanco, 28049 Madrid, Spain
In this work, we demonstrate the use of electrical impedance spectroscopy (EIS) for the disentanglement of several dielectric contributions in encapsulated single graphene layers. The dielectric data strongly vary qualitatively with the nominal graphene resistance. In the case of sufficiently low resistance of the graphene layers, the dielectric spectra are dominated by inductive contributions, which allow for disentanglement of the electrode/graphene interface resistance from the intrinsic graphene resistance by the application of an adequate equivalent circuit model. Higher resistance of the graphene layers leads to predominantly capacitive dielectric contributions, and the deconvolution is not feasible due to the experimental high frequency limit of the EIS technique.