Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics

Abstract

Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition (PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence (PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated.