Monolithic Implementation of an Instrumentation Circuit Applied to the CMOS Split-Drain Magnetic Sensor

Abstract

A CMOS instrumentation circuit implemented in 0,6mm technology intended for to be used as a signal conditioner applied to the MAGFET split-drain magnetic field sensor transistor is proposed. The circuit features a high gain structure and should be operated in feedback mode, achieving a current-voltage conversion that enables a load to be directly driven by the applied magnetic field. Static transfer characteristic measurements, magnetic field response, bandwidth and noise measurements are carried out in order to evaluate the circuit performance as a magnetic detector.

Keywords

• Magfet
• Split-Drain
• Magnetic Sensor
• Transresistance