Behavior of Raman modes in InPBi alloys under hydrostatic pressure
Changcheng Zheng,
Xiaohu Wang,
Jiqiang Ning,
Kun Ding,
Baoquan Sun,
Shumin Wang,
Shijie Xu
Affiliations
Changcheng Zheng
Physics Division, Department of Mathematical Sciences, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
Xiaohu Wang
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Jiqiang Ning
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Kun Ding
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Baoquan Sun
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Shumin Wang
Key Laboratory of Terahertz Solid-State Technology, CAS, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
Shijie Xu
Department of Physics, The University of Hong Kong, Pokfulam, Hong Kong, China
Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.
