Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method

Abstract

Background3C-SiC (β-SiC) exhibits outstanding electrochemical properties and radiation resistance, surpassing hexagonal-phase silicon carbide in irradiation resistance. As a promising candidate for the next generation of structural materials in nuclear applications and high-performance precision electronic devices for challenging reactor environments, the material has been garnering significant attention in recent decades. Within this realm, the exploration of one-dimensional silicon carbide nanomaterials has become a focal point in silicon carbide materials research. However, their practical applications have been hindered by challenges such as the absence of effective nanomaterial processing methods and processing complexities. Notably, ultrasonic processing technology has demonstrated effectiveness in addressing these challenges.PurposeThis study aims to synthesize and study 3C-SiC nanowires (NWs), investigating their ultrasonic fracture behavior for comprehensive understanding of the ultrasonic fracture characteristics of 3C-SiC NWs, laying the groundwork for basic research in the processing of one-dimensional SiC nanomaterials.MethodsFirstly, silicon carbide nanowires were prepared by chemical vapor deposition. Then the silicon carbide nanowires were characterized by microstructure observed by scanning electron microscope (SEM), transmission electron microscope (TEM), X-Ray diffraction (XRD) and Raman spectrum. Subsequently, the 3C-SiC nanowires were subjected to ultrasonic treatment, and the average length-to-diameter ratios of the ultrasonically treated nanowires were statistically analyzed to elucidate the effect of ultrasonic treatment on the nanowires. Finally, the strength of the silicon carbide nanowires was estimated by combining the bubble jet model and statistical data.ResultsThe findings reveal that the synthesized 3C-SiC NWs are predominantly of the 3C-SiC phase, exhibiting a notable presence of stacking faults. Ultrasonic treatment significantly influences the SiC NWs, leading to a noticeable reduction in the average Length-Diameter ratio, stabilizing at 18 post-treatment.ConclusionsThe observed results align with the effects of bubble jetting and are corroborated by the ultrasonic fragmentation behavior of 3C-SiC NWs. These findings offer valuable insights for the manipulation of nanomaterial size and morphology. This study provides a new perspective for the ultrasonic cutting of silicon carbide nanowires and the strength research of nanowires, and is of great significance for the future application of silicon carbide nanowires in the field of nuclear energy.

Keywords

• 3c-sic
• chemical vapor deposition
• silicon carbide nanowires
• nanowire fracture behavior
• ultrasonic tailoring