InGaN-based blue resonant cavity micro-LEDs with staggered multiple quantum wells enabling full-color and low-crosstalk micro-LED displays

Abstract

Herein, we proposed a unique structural design for indium gallium nitride (InGaN) based blue resonant cavity micro-light-emitting diodes (RC-μ-LEDs), focusing on the design, fabrication, and the relevant performance analyses. The proposed RC-μ-LEDs possess a three-layer staggered InGaN/GaN multiple quantum wells (MQWs) within the nanoporous Distributed Bragg Reflectors (NP-DBRs) and the conventional DBRs, introducing light confinement within such a resonant cavity. A passivation layer using atomic layer deposition (ALD) is adopted to reduce the leakage current from sidewall defects as well. Consequently, for the resulting RC-μ-LEDs, the divergence angle (DA) can be achieved down to 39.04°. While the input current increases from 1.77 A/cm² to 54 A/cm², the peak wavelength will shift from 456.16 nm to 449.18 nm, a blue shift of only 6.98 nm. Finally, we also discuss the temperature-dependent characteristics and the corresponding behaviors of our RC-μ-LEDs. Our demonstrated RC-μ-LEDs exhibit great wavelength stability with a diminished divergence angle, thus enabling full-color and low-crosstalk micro-LED displays for on-demand high-resolution applications.

Keywords

• Color conversion
• InGaN
• Light-emitting diode
• Micro-LED
• Nanoporous DBR
• Quantum dot