EPJ Web of Conferences (Jan 2017)

Properties of arsenic–implanted Hg1-xCdxTe MBE films

  • Izhnin Igor I.,
  • Voitsekhovskii Alexandr V.,
  • Korotaev Alexandr G.,
  • Fitsych Olena I.,
  • Bonchyk Oleksandr Yu.,
  • Savytskyy Hrygory V.,
  • Mynbaev Karim D.,
  • Varavin Vasilii S.,
  • Dvoretsky Sergey A.,
  • Yakushev Maxim V.,
  • Jakiela Rafal,
  • Trzyna Malgorzata

DOI
https://doi.org/10.1051/epjconf/201713301001
Journal volume & issue
Vol. 133
p. 01001

Abstract

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Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.