Modeling of discrete fracmemristor and its application

AIP Advances. 2020;10(1):015332-015332-6 DOI 10.1063/1.5134981

 

Journal Homepage

Journal Title: AIP Advances

ISSN: 2158-3226 (Online)

Publisher: AIP Publishing LLC

Society/Institution: American Institute of Physics

LCC Subject Category: Science: Physics

Country of publisher: United States

Language of fulltext: English

Full-text formats available: PDF, HTML

 

AUTHORS


S. He (School of Physics and Electronics, Central South University, Changsha 410083, People’s Republic of China)

K. Sun (School of Physics and Electronics, Central South University, Changsha 410083, People’s Republic of China)

Y. Peng (School of Physics and Electronics, Central South University, Changsha 410083, People’s Republic of China)

L. Wang (School of Physics and Electronics, Central South University, Changsha 410083, People’s Republic of China)

EDITORIAL INFORMATION

Peer review

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Time From Submission to Publication: 9 weeks

 

Abstract | Full Text

Researches on the fracmemristor have aroused increasing interest in the last several years, but there are no reports on design of the discrete fracmemristor. Based on the fractional-order difference and the mathematical model of the charge-controlled memristor, the discrete fracmemristor is designed where the amount of charge is determined by a fractional-order discrete system. In the numerical simulations, it shows that the pinched hysteresis loops are observed, which imply that the proposed memristor satisfies the definition of the memristor. As an application, the fracmemristor sine map is designed, and multistability is observed regarding the initial conditions of both the memristor and system. It provides a potential model for different applications such as cellular neural networks, modulators, sensors, chaotic systems, and programmable digital circuits.