Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Pierre Lottigier,
Davide Maria Di Paola,
Duncan T. L. Alexander,
Thomas F. K. Weatherley,
Pablo Sáenz de Santa María Modroño,
Danxuan Chen,
Gwénolé Jacopin,
Jean-François Carlin,
Raphaël Butté,
Nicolas Grandjean
Affiliations
Pierre Lottigier
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Davide Maria Di Paola
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Duncan T. L. Alexander
Electron Spectrometry and Microscopy Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Thomas F. K. Weatherley
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Raphaël Butté
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Nicolas Grandjean
Advanced Semiconductors for Photonics and Electronics Laboratory, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (9 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena.
