Nature Communications (Dec 2018)
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
- Gang Wang,
- Miao Zhang,
- Da Chen,
- Qinglei Guo,
- Xuefei Feng,
- Tianchao Niu,
- Xiaosong Liu,
- Ang Li,
- Jiawei Lai,
- Dong Sun,
- Zhimin Liao,
- Yongqiang Wang,
- Paul K. Chu,
- Guqiao Ding,
- Xiaoming Xie,
- Zengfeng Di,
- Xi Wang
Affiliations
- Gang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Da Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Qinglei Guo
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Xuefei Feng
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Tianchao Niu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Xiaosong Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Ang Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Jiawei Lai
- International Center for Quantum Materials, School of Physics, Peking University
- Dong Sun
- International Center for Quantum Materials, School of Physics, Peking University
- Zhimin Liao
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University
- Yongqiang Wang
- Materials Science and Technology Division, Los Alamos National Laboratory
- Paul K. Chu
- Department of Physics and Department of Materials Science and Engineering, City University of Hong Kong
- Guqiao Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Xi Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-018-07555-6
- Journal volume & issue
-
Vol. 9,
no. 1
pp. 1 – 9
Abstract
Fabricating lateral graphene p–n junctions with controlled doping levels is instrumental to realize ultrafast and efficient optoelectronic devices. Here, the authors report a seamless graphene based photodetector doped by selective ion implantation and in-situ chemical vapour deposition.
