Ultrafast and Broadband Terahertz Modulator With Polarization Selectivity

Hongchuan He; Qiuping Huang; Honglei Cai; Yi Zhao; Xiaoxia Lin; Hao Cheng; Tian Ma; Jianlin Wang; Haoliang Huang; Ming Yin; Zhengping Fu; Yalin Lu

doi:10.1109/JPHOT.2019.2947993

IEEE Photonics Journal (Jan 2019)

Ultrafast and Broadband Terahertz Modulator With Polarization Selectivity

Hongchuan He,
Qiuping Huang,
Honglei Cai,
Yi Zhao,
Xiaoxia Lin,
Hao Cheng,
Tian Ma,
Jianlin Wang,
Haoliang Huang,
Ming Yin,
Zhengping Fu,
Yalin Lu

Affiliations

Hongchuan He: ORCiD; Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
Qiuping Huang: ORCiD; Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
Honglei Cai: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
Yi Zhao: ORCiD; Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
Xiaoxia Lin: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
Hao Cheng: Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
Tian Ma: Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
Jianlin Wang: ORCiD; Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
Haoliang Huang: Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
Ming Yin: Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
Zhengping Fu: Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
Yalin Lu: Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China

DOI: https://doi.org/10.1109/JPHOT.2019.2947993
Journal volume & issue: Vol. 11, no. 6
pp. 1 – 10

Abstract

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We demonstrate a broadband and polarization selective terahertz modulator with ultrafast modulation speed, based on the Si grating metasurface on the Sapphire substrate. The Si layer is implanted with B+ and subsequently annealed, which significantly reduces the lifetime of carriers and increases the carrier density, and thus realizes ultrafast and efficient modulation. Our modulator achieves modulation depth up to 60% for the x-polarized THz wave and less than 1% for the y-polarized THz wave in the frequency ranging from 0.5 to 2.5 THz, with switch-on and switch-off time of modulation in 20 ps and around 300 ps, respectively. The carrier dynamics of the fabricated Si grating is also studied to illustrate the ultrafast modulated mechanism. Our results pave the way for ultrafast manipulation of terahertz spectrum and shows great potential in terahertz communication.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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