APL Materials (Nov 2023)

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

  • Sushma Raghuvansy,
  • Jon P. McCandless,
  • Marco Schowalter,
  • Alexander Karg,
  • Manuel Alonso-Orts,
  • Martin S. Williams,
  • Christian Tessarek,
  • Stephan Figge,
  • Kazuki Nomoto,
  • Huili Grace Xing,
  • Darrell G. Schlom,
  • Andreas Rosenauer,
  • Debdeep Jena,
  • Martin Eickhoff,
  • Patrick Vogt

DOI
https://doi.org/10.1063/5.0174373
Journal volume & issue
Vol. 11, no. 11
pp. 111113 – 111113-9

Abstract

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The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide-catalyzed epitaxy (MOCATAXY). We grow phase-pure β-Ga2O3(2̄01) and phase-pure ϵ/κ-Ga2O3(001) with smooth surfaces by S-MBE and MOCATAXY. Thin film analysis shows that the crystallographic and surface features of the β-Ga2O3(2̄01)/AlN(0001) and ϵ/κ-Ga2O3(001)/AlN(0001) epilayers are of high crystalline quality. Growth and phase diagrams are developed to synthesize Ga2O3 on AlN by MBE and MOCATAXY and to provide guidance to grow Ga2O3 on several non-oxide surfaces, e.g., AlN, GaN, and SiC, by MBE, S-MBE, and MOCATAXY.