Nature Communications (Feb 2021)

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

  • Kiumars Aryana,
  • John T. Gaskins,
  • Joyeeta Nag,
  • Derek A. Stewart,
  • Zhaoqiang Bai,
  • Saikat Mukhopadhyay,
  • John C. Read,
  • David H. Olson,
  • Eric R. Hoglund,
  • James M. Howe,
  • Ashutosh Giri,
  • Michael K. Grobis,
  • Patrick E. Hopkins

DOI
https://doi.org/10.1038/s41467-020-20661-8
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 11

Abstract

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Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers.