Nature Communications (Dec 2022)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

  • Brian Paquelet Wuetz,
  • Merritt P. Losert,
  • Sebastian Koelling,
  • Lucas E. A. Stehouwer,
  • Anne-Marije J. Zwerver,
  • Stephan G. J. Philips,
  • Mateusz T. Mądzik,
  • Xiao Xue,
  • Guoji Zheng,
  • Mario Lodari,
  • Sergey V. Amitonov,
  • Nodar Samkharadze,
  • Amir Sammak,
  • Lieven M. K. Vandersypen,
  • Rajib Rahman,
  • Susan N. Coppersmith,
  • Oussama Moutanabbir,
  • Mark Friesen,
  • Giordano Scappucci

DOI
https://doi.org/10.1038/s41467-022-35458-0
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 8

Abstract

Read online

Spin qubits in Si/SiGe quantum dots suffer from variability in the valley splitting which will hinder device scalability. Here, by using 3D atomic characterization, the authors explain this variability by random Si and Ge atomic fluctuations and propose a strategy to statistically enhance the valley splitting