Nature Communications (Jan 2020)
Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
- Zhaoli Gao,
- Sheng Wang,
- Joel Berry,
- Qicheng Zhang,
- Julian Gebhardt,
- William M. Parkin,
- Jose Avila,
- Hemian Yi,
- Chaoyu Chen,
- Sebastian Hurtado-Parra,
- Marija Drndić,
- Andrew M. Rappe,
- David J. Srolovitz,
- James M. Kikkawa,
- Zhengtang Luo,
- Maria C. Asensio,
- Feng Wang,
- A. T. Charlie Johnson
Affiliations
- Zhaoli Gao
- Department of Physics and Astronomy, University of Pennsylvania
- Sheng Wang
- Department of Physics, University of California at Berkeley
- Joel Berry
- Department of Materials Science and Engineering, University of Pennsylvania
- Qicheng Zhang
- Department of Physics and Astronomy, University of Pennsylvania
- Julian Gebhardt
- Department of Chemistry, University of Pennsylvania
- William M. Parkin
- Department of Physics and Astronomy, University of Pennsylvania
- Jose Avila
- Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
- Hemian Yi
- Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
- Chaoyu Chen
- Synchrotron-SOLEIL and Université Paris-Saclay Saint-Aubin
- Sebastian Hurtado-Parra
- Department of Physics and Astronomy, University of Pennsylvania
- Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania
- Andrew M. Rappe
- Department of Chemistry, University of Pennsylvania
- David J. Srolovitz
- Department of Materials Science and Engineering, University of Pennsylvania
- James M. Kikkawa
- Department of Physics and Astronomy, University of Pennsylvania
- Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology
- Maria C. Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Valencia Institute of Materials Science (ICMUV), MATINÉE: CSIC Associated Unit-(ICMM-ICMUV Valencia University)
- Feng Wang
- Department of Physics, University of California at Berkeley
- A. T. Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania
- DOI
- https://doi.org/10.1038/s41467-019-14022-3
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 10
Abstract
The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC domains.
