Dataset of N-doped CuO:NiO mixed oxide thin film sensor for glucose oxidation

Abstract

In this data in brief article dataset of plasma-assisted nitrogen doping of a binderless, spin-coated CuO-NiO mixed oxide thin film was presented (Palmer et al., 2020). A comparison of the CuO, N–CuO/Cu2O, CuO:NiO and N–CuO/Cu2O:NiO are presented. The as prepared films were used for the application of a glucose sensor. The nitrogen doped species, generated during plasma ignition, resulted in a beneficial phase transformation of CuO to Cu2O. Characterisation techniques such as XPS, particle size distribution and EIS techniques were utilized to study the morphology, structural features, doping profile and electrical properties of the various developed electrodes. The electrochemical performance of the thin film sensors was tested using cyclic voltammetry and chronoamperometry. The CuO exhibited a sensitivity of 830 µA/mM cm2 up to 1.65 mM of glucose, N–CuO/Cu2O had a linear range up to 1.91 mM with a sensitivity of 873 µA/mM cm2 and the CuO:NiO electrode had a linear range up to 1.65 mM with a sensitivity of 1103 µA/mM.cm2 respectively. A detailed description of the methodology used is provided below.

Keywords

• Nitrogen doping
• Mixed oxides
• Glucose oxidation
• Plasma etching
• Copper oxide
• Nickel oxide