Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties
Seong Cheol Jang,
Jozeph Park,
Hyoung-Do Kim,
Hyunmin Hong,
Kwun-Bum Chung,
Yong Joo Kim,
Hyun-Suk Kim
Affiliations
Seong Cheol Jang
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
Jozeph Park
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
Hyoung-Do Kim
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
Hyunmin Hong
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea
Kwun-Bum Chung
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea
Yong Joo Kim
Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
Hyun-Suk Kim
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
In-Ga-Zn-O (IGZO) films deposited by sputtering process generally require thermal annealing above 300°C to achieve satisfactory semiconductor properties. In this work, microwave and e-beam radiation are adopted at room temperature as alternative activation methods. Thin film transistors (TFTs) based on IGZO semiconductors that have been subjected to microwave and e-beam processes exhibit electrical properties similar to those of thermally annealed devices. However spectroscopic ellipsometry analyses indicate that e-beam radiation may have caused structural damage in IGZO, thus compromising the device stability under bias stress.
