Properties of nanocrystalline silicon probed by optomechanics
Navarro-Urrios Daniel,
Colombano Martín F.,
Maire Jeremie,
Chávez-Ángel Emigdio,
Arregui Guillermo,
Capuj Néstor E.,
Devos Arnaud,
Griol Amadeu,
Bellieres Laurent,
Martínez Alejandro,
Grigoras Kestutis,
Häkkinen Teija,
Saarilahti Jaakko,
Makkonen Tapani,
Sotomayor-Torres Clivia M.,
Ahopelto Jouni
Affiliations
Navarro-Urrios Daniel
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Colombano Martín F.
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Maire Jeremie
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Chávez-Ángel Emigdio
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Arregui Guillermo
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Capuj Néstor E.
Depto. Física, Universidad de La Laguna, 38200San Cristóbal de La Laguna, Spain
Devos Arnaud
Institut d’Electronique, de Microélectronique et de Nanotechnologie, Unité Mixte de Recherche, CNRS8250, Avenue Poincaré, CS 60069, F-59652Villeneuve d’Ascq Cedex, France
Griol Amadeu
Nanophotonics Technology Center, Universitat Politècnica de València, 46022València, Spain
Bellieres Laurent
Nanophotonics Technology Center, Universitat Politècnica de València, 46022València, Spain
Martínez Alejandro
Nanophotonics Technology Center, Universitat Politècnica de València, 46022València, Spain
Grigoras Kestutis
VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
Häkkinen Teija
VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
Saarilahti Jaakko
VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
Makkonen Tapani
VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
Sotomayor-Torres Clivia M.
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193Barcelona, Spain
Ahopelto Jouni
VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, FI-02044 VTT, Espoo, Finland
Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimize their functionality for devices and applications. Here, we report on the optical, mechanical and thermal properties of nanocrystalline silicon probed by means of optomechanical nanobeams to extract information of the dynamics of optical absorption, mechanical losses, heat generation and dissipation. The optomechanical nanobeams are fabricated using nanocrystalline films prepared by annealing amorphous silicon layers at different temperatures. The resulting crystallite sizes and the stress in the films can be controlled by the annealing temperature and time and, consequently, the properties of the films can be tuned relatively freely, as demonstrated here by means of electron microscopy and Raman scattering. We show that the nanocrystallite size and the volume fraction of the grain boundaries play a key role in the dissipation rates through nonlinear optical and thermal processes. Promising optical (13,000) and mechanical (1700) quality factors were found in the optomechanical cavity realized in the nanocrystalline Si resulting from annealing at 950°C. The enhanced absorption and recombination rates via the intragap states and the reduced thermal conductivity boost the potential to exploit these nonlinear effects in applications including Nanoelectromechanical systems (NEMS), phonon lasing and chaos-based devices.