OPTIMIZATION OF THE PARAMETERS OF A SEMICONDUCTOR SENSING ELEMENT IN THE FORM OF A ROUND MEMBRANE IN ORDER TO INCREASE THE SENSITIVITY AND REDUCE THE LINEARITY ERROR OF THE OUTPUT SIGNAL

Abstract

Background. The aim of the study is to develop a semiconductor sensing element for a pressure sensor based on a strain-resistive effect in the form of a profiled membrane with increased sensitivity and reduced linearity error of the output signal. Materials and methods. The simulation of a sensor element in the form of a profiled membrane in the COMSOL Multiphisics software package was carried out to determine the geometric parameters of the silicon membrane cross-section, providing an optimal ratio of sensitivity and linearity error of the output signal. Results. A simulation model of a semiconductor pressure sensor sensor element has been created, which allows to increase the sensitivity and reduce the linearity error of the output signal. Conclusions. Thus, on the basis of the conducted modeling, the optimal geometric parameters of the cross-section of the profiled membrane of a semiconductor pressure strain converter of the membrane type were determined.

Keywords

• semiconductor sensing element
• silicon membrane
• increased sensitivity
• linearity error