The Effect of Organic Polymer Interfacial Layer Thickness and Series Resistance C-G/w-V Characteristics in Al/PVA (Zn-doped)/p-Si (MPS) Structure

Abstract

In this study, the electrical properties of polymer interfacial layer Al/p-Si (MPS) with thickness of 50 and 150 nm (Zn-doped PVA) were investigated in terms of frequency using the capacitance- conductance-voltage (C-G/w-V) measurement methods. C-G/w-V measurements were taken at room temperature at frequencies of 2kHz, 20kHz and 200kHz in the range of -3.5 / + 5.5 V with 50 mV steps. Utilizing the cut-off point and slope of the linear part of the reverse biased C-2-V graphics; basic electrical parameters such as the values of diffusion potential (VD),doping concentration of acceptor atoms (NA), Fermi energy level (EF), depletion layer width (WD) and barrier height (ΦB) were obtained and compared based on both frequency and thickness. These parameters are highly dependent on both the thickness of organic interface layer and frequency. In addition, voltage-dependent change profiles of interface states (Nss) and the resistance (Ri) were obtained using low-high frequency (CLF-CHF) capacitance method and the Nicollian and Brews method of these structures using,respectively. To determine which region and frequency of the series resistance (Rs) effect is more effective, measured C-G/w-V curves were corrected considering Rs value. Obtained experimental results were observed to be very effective on the C-G/w-V of the polymer interfacial layer thickness and Rs and Nss values.

Keywords

• The effects of interfacial layer and Rs
• Low-high frequency capacitance method
• Distribution interfacial of interface states.