Volume reflection efficiency for negative particles in bent crystals

Abstract

We suggest a formula for the efficiency of a single volume reflection of negatively charged particles in bent crystal planes and compare it to recent experiments at SLAC, MAMI and CERN with electrons and negative pions in the energy range from 0.855 to 150 GeV in Si crystals. We show that Lindhard reversibility rule provides sufficient basis for quantitative understanding of these experiments.

Keywords

• Bent crystals
• Channelling
• Volume reflection