Recent advances in organic‐based materials for resistive memory applications
Yang Li,
Qingyun Qian,
Xiaolin Zhu,
Yujia Li,
Mayue Zhang,
Jingni Li,
Chunlan Ma,
Hua Li,
Jianmei Lu,
Qichun Zhang
Affiliations
Yang Li
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Qingyun Qian
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Xiaolin Zhu
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Yujia Li
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Mayue Zhang
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Jingni Li
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Chunlan Ma
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu China
Hua Li
College of Chemistry, Chemical Engineering and Materials Science Soochow University Suzhou Jiangsu China
Jianmei Lu
College of Chemistry, Chemical Engineering and Materials Science Soochow University Suzhou Jiangsu China
Qichun Zhang
School of Materials Science and Engineering Nanyang Technological University Singapore Singapore
Abstract With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory electronics. Nevertheless, the physical limitations of conventional Si‐based binary storage systems lag far behind the ultrahigh‐density requirements of post‐Moore information storage. In this regard, the pursuit of alternatives and/or supplements to the existing storage technology has come to the forefront. Recently, organic‐based resistive memory materials have emerged as promising candidates for next‐generation information storage applications, which provide new possibilities of realizing high‐performance organic electronics. Herein, the memory device structure, switching types, mechanisms, and recent advances in organic resistive memory materials are reviewed. In particular, their potential of fulfilling multilevel storage is summarized. Besides, the present challenges and future prospects confronted by organic resistive memory materials and devices are discussed.
