Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Jin-Chuan Zhang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Zhi-Wei Jia
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Ning Zhuo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Shen-Qiang Zhai
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Shu-Man Liu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Feng-Qi Liu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
Zhan-Guo Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences; Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People’s Republic of China
A phase-locked quantum cascade laser (QCL) array consisting of one hundred elements that were integrated in parallel was achieved at λ ∼ 4.6 μm. The proposed Fraunhofer’s multiple slits diffraction model predicted and explained the far-field pattern of the phase-locked laser array. A single-lobed far-field pattern, attributed to the emission of an in-phase-like supermode, is obtained near the threshold (Ith). Even at 1.5 Ith, greater than 73.3% of the laser output power is concentrated in a low-divergence beam with an optical power of up to 40 W.
