Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Abstract

Strain engineering: Tuning the bandgap of 2D materials The bandgap of two-dimensional semiconducting materials can be easily tuned in real time by stretching or compressing them. An international team of researcher led by Dr. Andres Castellanos-Gomez at IMDEA Nanoscience, Spain, studied the optical properties of single-atom thick two-dimensional semiconductors under the application of tensile or compressive biaxial strain. In order to apply the strain the researchers exploited the thermal expansion or compression of the different substrates carrying the atomically thin materials and then compared their results to atomistic simulations. This strain method can be applied in a fast and reversible way and it leads to large changes in the band structure of these semiconducting materials. Research into strain engineering two-dimensional materials may help us in fabricating novel devices like color-changing light emitters or novel and more efficient solar cells.