Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

Abstract

Abstract A multi‐active‐region bipolar‐cascade edge‐emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third‐order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm2. The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm−1. The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.

Keywords

• Lasing action in semiconductors
• Design of specific laser systems
• Laser resonators and cavities
• Laser beam characteristics and interactions
• Laser resonators and cavities
• Laser beam interactions and properties