Radiation effect sensitive peripheral of 180 nm CMOS microprocessor and probabilistic model analysis of its damage dose

Abstract

BackgroundThe rapid development of nuclear emergency robots requires more understanding of online radiation damage in commercial microprocessors in robots.PurposeThis study aims to find the most sensitive peripheral of complementary metal oxide semiconductor (CMOS) microprocessor to radiation dose and establish the statistical probability model of its failure dose.MethodsThe online ionizing irradiation test of 60Co source was carried out for 180 nm CMOS microprocessor STM32F103C8T6. The trapped charge model was used to analyze the most sensitive peripherals. The normal, logarithmic, two-parameter Weibull distribution and three-parameter Weibull distribution were used in the data processing. Radiation effect sensitivities of in-chip Flash memory, timer, common synchronous/asynchronous transceiver, analog/digital converter and common input/output peripherals were compared and analyzed. The statistical probability model of FLASH irradiation failure dose was established.Results & ConclusionsThe result shows that FLASH is the most sensitive peripheral of CMOS microprocessor to the total irradiation dose due to its Charge Pump. The write failure of FLASH memory is more in line with three-parameter Weibull distribution when the total dose is increased.

Keywords

• cmos microprocessor
• total ionizing dose effect
• on-line testing
• probability distribution