Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode
Li-E. Cai,
Bao-Ping Zhang,
Hao-Xiang Lin,
Zai-Jun Cheng,
Peng-Peng Ren,
Zhi-Chao Chen,
Jin-Man Huang,
Lin-Lin Cai
Affiliations
Li-E. Cai
School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Bao-Ping Zhang
Department of Electronic Engineering, Optoelectronics Engineering Research Center, College of Electronic Science and Technology (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Hao-Xiang Lin
School of Electronic and Information Engineering, Beihang University, Beiijng 100083, China
Zai-Jun Cheng
School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Peng-Peng Ren
School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Zhi-Chao Chen
School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Jin-Man Huang
Xiamen AnMaiXin Automation Technology Co., Ltd., Xiamen 361024, China
Lin-Lin Cai
Xiamen AnMaiXin Automation Technology Co., Ltd., Xiamen 361024, China
GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow barrier structure improves the performance of the device, including the super-linear increase of electroluminescence integral intensity, the mitigation of efficiency droop at high current density, the reduction of wavelength drift, the reduction of forward voltage, and the improvement of wall-plug efficiency. This is due to the narrowing of the thickness of the quantum barrier, which results in the smaller electric field among the quantum well, the weakening of the quantum confinement Stark effect, the more uniform distribution of carriers across the active region of the device, and the suppression of electron leakage.
