Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

J. M. Zhan; P. G. Li; H. Liu; S. L. Tao; H. Ma; J. Q. Shen; M. J. Pan; Z. J. Zhang; S. L. Wang; G. L. Yuan

doi:10.1063/1.4945694

AIP Advances (Apr 2016)

Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

J. M. Zhan,
P. G. Li,
H. Liu,
S. L. Tao,
H. Ma,
J. Q. Shen,
M. J. Pan,
Z. J. Zhang,
S. L. Wang,
G. L. Yuan

Affiliations

J. M. Zhan: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
P. G. Li: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
H. Liu: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
S. L. Tao: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
H. Ma: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
J. Q. Shen: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
M. J. Pan: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
Z. J. Zhang: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
S. L. Wang: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
G. L. Yuan: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China

DOI: https://doi.org/10.1063/1.4945694
Journal volume & issue: Vol. 6, no. 4
pp. 045001 – 045001-6

Abstract

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La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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