Large‐Area Deposition of Highly Crystalline F4‐Tetracyanoquinodimethane Thin Films by Molecular Step Templates
Fengquan Qiu,
Wei Deng,
Xinmin Shi,
Dewen Ai,
Xiaobin Ren,
Anyi Dong,
Xiujuan Zhang,
Jiansheng Jie
Affiliations
Fengquan Qiu
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Wei Deng
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Xinmin Shi
Macao Institute of Materials Science and Engineering (MIMSE) MUST‐SUDA Joint Research Center for Advanced Functional Materials Macau University of Science and Technology Taipa Macau SAR 999078 P. R. China
Dewen Ai
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Xiaobin Ren
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Anyi Dong
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Xiujuan Zhang
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Jiansheng Jie
Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China
Theoretical studies have unequivocally determined the exceptional electron transport properties of the fluorinated tetracyanoquinodimethane (Fx‐TCNQ) family, presenting a promising avenue for the realization of high‐performance n‐channel organic thin‐film transistors (OTFTs). However, owing to the intrinsic low crystallinity of this class of materials, Fx‐TCNQ‐based n‐channel OTFTs have not been experimentally achieved so far. Herein, a molecular step template (MST)‐assisted method that dramatically improves the crystallinity of F4‐TCNQ thin films is reported. The MST not only lowers the nucleation barrier of F4‐TCNQ molecules along the in‐plane direction but also reduces the nucleation density. This approach facilitates the realization of compact, oriented, and highly crystalline F4‐TCNQ thin films, resulting in impressive electron mobility of up to 2.58 cm2 V−1 s−1. Notably, this achievement surpasses the electron mobility of F4‐TCNQ thin films fabricated without the MST by a factor of 107. Furthermore, the incorporation of the p‐type MST provides a novel pathway for constructing complementary inverters, showcasing a high voltage gain of 112.6 V V−1 and a substantial noise margin of 89.3% with exceptional uniformity. In this work, a general and efficient route is paved to produce high‐performance n‐channel OTFTs toward organic complementary circuits.