Narrow Band Organic Photodiode with Photoresponse at 808 nm for Photoplethysmography

Abstract

The fabrication and characterization of an all polymers‐based bulk heterojunction type organic photodiode having a narrowband response in the near‐infrared spectral region with full width at half‐maxima of 63 nm is reported. The active layer of the photodiode constitutes a 1:1 (by weight) blend of poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b;4,5‐b']dithiophene‐2,6‐diyl‐alt‐(4‐(2‐ethylhexyl)‐3‐fluorothieno[3,4‐b]thiophene‐)‐2‐carboxylate‐2‐6‐diyl)] (PCE10) and poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diy1]‐alt‐5,5′‐(2,2′‐dithiophene)} (N2200) deposited using solution processing. The device exhibits a linear dynamic range of 35 dB, response speed of 893 kHz, and specific‐detectivity of 109 Jones at 808 nm excitation wavelength. The narrowband response is achieved using the charge collection narrowing mechanism in a 2.7 μm thick junction device.

Keywords

• near‐infrared sensing
• organic semiconductors
• photodetectors
• photoplethysmography