Opto-Electronic Advances (Mar 2018)

850/940-nm VCSEL for optical communication and 3D sensing

  • Cheng Chih-Hsien,
  • Shen Chih-Chiang,
  • Kao Hsuan-Yun,
  • Hsieh Dan-Hua,
  • Wang Huai-Yung,
  • Yeh Yen-Wei,
  • Lu Yun-Ting,
  • Huang Chen Sung-Wen,
  • Tsai Cheng-Ting,
  • Chi Yu-Chieh,
  • Kao Tsung Sheng,
  • Wu Chao-Hsin,
  • Kuo Hao-Chung,
  • Lee Po-Tsung,
  • Lin Gong-Ru

DOI
https://doi.org/10.29026/oea.2018.180005
Journal volume & issue
Vol. 1, no. 3
pp. 180005-1 – 180005-11

Abstract

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This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.

Keywords