Nature Communications (Jun 2016)

Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

  • Ashish V. Penumatcha,
  • Ramon B. Salazar,
  • Joerg Appenzeller

DOI
https://doi.org/10.1038/ncomms11913
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 1

Abstract

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Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a simple parabolic κ(E) WKB approximation, one would extract a much smaller bandgap since Imin is severely underestimated.