Resonant Tunneling of Electrons and Holes through the In_xGa_1−xN/GaN Parabolic Quantum Well/LED Structure

Abstract

Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by solving the Schrödinger equation. The effects of the mole fraction on the structure strain, resonant tunneling and tunneling lifetime, and LH–HH splitting were characterized. The value of LH–HH splitting increased and remained higher than the Fermi energy; therefore, only the HH band was dominant in terms of the valence band properties. The results indicate that an increase in the mole fraction can lead to efficiency droop.

Keywords

• InGaN/GaN
• quantum resonant tunneling
• parabolic quantum well/LED
• heavy hole
• light hole
• multiple quantum wells