Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

Abstract

Abstract We propose a detailed approach for modeling the C–V characteristic of complex heterostructure-based devices, investigating the case of UV-C LEDs. The study is based on combined experimental measurements and TCAD simulations, and explores: i) the impact of defects at critical interfaces on the apparent charge profile; ii) the dependence of the C–V characteristic on the efficiency of carrier injection toward the QWs; iii) the impact of a non-ideal partially-rectifying p-contact on the C–V curves. By accounting for these processes and non-idealities, we were able to achieve a good reproduction of the experimental C–V characteristic and of the corresponding apparent charge profile. The result presented in this paper provide relevant information for the investigation of specific device features, based on simple electrical characterizations.