Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage
Ning Wang,
Cong Meng,
Zhi-Hao Ma,
Cong Gao,
Hong-Zhi Jia,
Guo-Rong Sui,
Xiu-Min Gao
Affiliations
Ning Wang
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Zhi-Hao Ma
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Cong Gao
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Guo-Rong Sui
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Xiu-Min Gao
Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, China
Single-layer graphene (SLG) sheets can exhibit thermoelectric properties under the control of gate voltage. The controlled factors and regulation mechanism of SLG thermoelectric properties have become research hotspots. In this paper, a SLG thermoelectric parameter model considering carrier concentration and mobility with temperature and gate voltage is proposed. Based on the proposed model, the square resistance (Rs) and Seebeck coefficient (S) of the SLG are calculated. The results show that the maximum value of Rs decreases from 5.8 KΩ to 3.2 KΩ at the Dirac voltage when the temperature increases from 100 K to 500 K. A large and stable S can be obtained at high voltages and temperatures. The maximum value of S can reach 161.3 μV/K at T = 500 K, exhibiting a more obvious thermoelectric characteristic. Simultaneously, the saturation law of the power factor (Q) with the change of gate voltage and the amplitude regulation of Q by temperature are obtained. This work can provide a theoretical basis for analyzing the thermoelectric characteristics of SLG.
