Charge Carrier Transport Behavior and Dielectric Properties of BaF<sub>2</sub>:Tb<sup>3+</sup> Nanocrystals
Xiaoyan Cui,
Tingjing Hu,
Huangyu Wu,
Junkai Zhang,
Lihua Yang,
Xin Zhong,
Xiaoxin Wu,
Jingshu Wang,
Xuefei Li,
Jinghai Yang,
Chunxiao Gao
Affiliations
Xiaoyan Cui
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Tingjing Hu
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Huangyu Wu
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Junkai Zhang
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Lihua Yang
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Xin Zhong
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Xiaoxin Wu
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Jingshu Wang
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Xuefei Li
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Jinghai Yang
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, National Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, China
Chunxiao Gao
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
The charge carrier behavior and dielectric properties of BaF2:Tb3+ nanocrystals have been studied by alternating current (AC) impedance spectroscopy. The electron and ion coexist in the transport process. The F− ion’s contribution to the total conduction increases with the doping concentration up to 4% and then decreases. Tb doping leads to the increase of defect quantities and a variation of charge carrier transport paths, which causes the increase of the ion diffusion coefficient and the decreases of bulk and grain boundary resistance. When the Tb-doped concentration is higher than 4%, the effect of deformation potential scattering variation on the transport property is dominant, which results in the decrease of the ion diffusion coefficient and increases of bulk and grain boundary resistance. The conduction properties of our BaF2:Tb3+ nanocrystals are compared with previous results that were found for the single crystals of rare earth-doped BaF2. Tb doping causes increases of both the quantity and the probability of carrier hopping, and it finally leads to increases of BaF2 nanocrystals’ permittivity in the low frequency region.
