Nature Communications (Apr 2025)

In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs

  • Yizhen Zheng,
  • Xing Lin,
  • Jiongzhao Li,
  • Jianan Chen,
  • Wenhao Wu,
  • Zixuan Song,
  • Yuan Gao,
  • Zhuang Hu,
  • Huifeng Wang,
  • Zikang Ye,
  • Haiyan Qin,
  • Xiaogang Peng

DOI
https://doi.org/10.1038/s41467-025-58471-5
Journal volume & issue
Vol. 16, no. 1
pp. 1 – 12

Abstract

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Abstract Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.