An improved analytical model for the statistics of SET emergence point in HfO2 memristive device
Dong Xiang,
Rulin Zhang,
Yu Li,
Cong Ye,
Enrique Miranda,
Jordi Suñé,
Shibing Long
Affiliations
Dong Xiang
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
Rulin Zhang
Hubei Key Laboratory of Applied Mathematics, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
Yu Li
Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
Cong Ye
Hubei Key Laboratory of Applied Mathematics, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
Enrique Miranda
Departamentd’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
Jordi Suñé
Departamentd’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
Shibing Long
School of Microelectronics, University of Science and Technology of China, Hefei 230027, China
In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO2/Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO2 memristive device is fully illuminated.
