Insight into the underlying competitive mechanism for the shift of the charge neutrality point in a trilayer-graphene field-effect transistor
Tao Huang,
Jiafen Ding,
Zirui Liu,
Rui Zhang,
BoLei Zhang,
Kai Xiong,
Longzhou Zhang,
Chong Wang,
Shili Shen,
Cuiyu Li,
Peng Yang,
Feng Qiu
Affiliations
Tao Huang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Jiafen Ding
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Zirui Liu
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Rui Zhang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
BoLei Zhang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Kai Xiong
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Longzhou Zhang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Chong Wang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Shili Shen
School of Ecology and Environmental Sciences, Yunnan University, Kunming, 650500, China
Cuiyu Li
Advanced Computing East China Sub-center, Suma Technology Co. Ltd, Kunshan, 215300, China
Peng Yang
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China
Feng Qiu
National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650500, China; Corresponding author.
Layer-number modulation in graphene has become a recent focus of research due to the superior degree of freedom that can be achieved in terms of magic-angle, wettability, superconductivity, and superlattices. However, the intrinsic transport of multilayer graphene is indistinguishable in atmospheric adsorbates and supporting environment, and its underlying charge transfer mechanism has not yet been thoroughly determined. In this study, a shift in the charge neutrality point of trilayer graphene (TLG) is demonstrated to be regulated by three governing factors: oxygen gas (O2), water molecules (H2O), and thermally activated electrons. Absorbed O2 induces a high work function in semimetallic TLG, while H2O is not an evident dopant but can strengthen binding against O2 desorption. A simplified model is developed to elucidate the competitive mechanism and charge transfer among these two dopants (O2, H2O) and thermal electrons, and the model is demonstrated by work function regulation and Bader charge transfer based on density functional theory calculations. This study provides a strategy to explore transport modulation of multilayer graphene in the fields of ballistic transport and low power consumption of graphene field-effect transistors.
