Optical and Electrical Properties of TTF-MPcs (M = Cu, Zn) Interfaces for Optoelectronic Applications
María Elena Sánchez-Vergara,
Mariel Leyva-Esqueda,
José Ramón Alvárez-Bada,
Verónica García-Montalvo,
Iván Darío Rojas-Montoya,
Omar Jiménez-Sandoval
Affiliations
María Elena Sánchez-Vergara
Facultad de Ingeniería, Universidad Anáhuac México Norte, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Estado de México, Mexico
Mariel Leyva-Esqueda
Facultad de Ingeniería, Universidad Anáhuac México Norte, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Estado de México, Mexico
José Ramón Alvárez-Bada
Facultad de Ingeniería, Universidad Anáhuac México Norte, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Huixquilucan 52786, Estado de México, Mexico
Verónica García-Montalvo
Instituto de Química, Universidad Nacional Autónoma de México, Circuito Exterior, Ciudad Universitaria, México 04510, D.F., Mexico
Iván Darío Rojas-Montoya
Instituto de Química, Universidad Nacional Autónoma de México, Circuito Exterior, Ciudad Universitaria, México 04510, D.F., Mexico
Omar Jiménez-Sandoval
Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Apartado Postal 1-798, Querétaro, Qro. 76001, Mexico
Sandwich structures were fabricated by a vacuum deposition method using MPc (M = Cu, Zn), with a Tetrathiafulvalene (TTF) derivative, and Indium Tin Oxide (ITO) and aluminum electrodes. The structure and morphology of the deposited films were studied by IR spectroscopy, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The absorption spectra of TTF derivative-MPc (M = Cu, Zn) thin films deposited at room temperature were recorded in the spectral range 200–1000 nm. The optical band gap of the thin films was determined from the (αhν)1/2 vs. hν plot. The direct-current (DC) electrical properties of the glass/ITO/TTFderiv-MPc (M = Cu, Zn)/Al structures were also investigated. Changes in conductivity of the derivative-TTF-enriched Pc compounds suggest the formation of alternative paths for carrier conduction. At low voltages, forward current density obeys an ohmic I-V relationship; at higher voltages, conduction is mostly due to a space-charge-limited conduction (SCLC) mechanism.