Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures
Yachao Zhang,
Zhizhe Wang,
Shenglei Zhao,
Shengrui Xu,
Jincheng Zhang,
Yue Hao
Affiliations
Yachao Zhang
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, China
Zhizhe Wang
China Electronic Product Reliability and Environmental Testing Research Institute, No. 110 Dongguanzhuang Road, Guangzhou 510610, China
Shenglei Zhao
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, China
Shengrui Xu
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, China
Jincheng Zhang
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, China
Yue Hao
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, China
In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail. Due to the decent electron confinement of InGaN channel heterostructures, a high current on/off ratio of 107 is achieved for the SBDs. In addition, the turn-on voltage (Von) of lateral InGaN channel SBDs is as low as 0.55 V owing to the employment of a low work function tungsten (W) anode. Particularly, the excellent thermal stability of the InGaN channel SBDs is demonstrated. At 150 °C, the maximum forward anode current (Imax) reaches 63% of the value at room temperature, and the reverse leakage current only degenerates by 3.5 times compared to the room temperature value, which are evidently better than the results of traditional GaN channel SBDs. Moreover, the high linearity of InGaN channel SBDs at both room temperature and elevated temperature is revealed. These results demonstrate the great promise of lateral InGaN channel SBDs in high power and wideband electronics fields in the future.
