H2-Sensing Performance of 2D WO3 Nanostructure—Effect of Anodization Parameter
Anurat Wisitsora-at,
Ditsayut Phokaratkul,
Kata Jaruwongrangsee,
Thitima M. Daniels,
Wojtek Wlodarski
Affiliations
Anurat Wisitsora-at
Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, KlongLuang, Pathumthani 12120, Thailand
Ditsayut Phokaratkul
Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, KlongLuang, Pathumthani 12120, Thailand
Kata Jaruwongrangsee
Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, KlongLuang, Pathumthani 12120, Thailand
Thitima M. Daniels
Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, KlongLuang, Pathumthani 12120, Thailand
Wojtek Wlodarski
School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
In this work, we investigate the effect of HNO3 anodizing solution concentration ranging from 1.5 to 3 M on H2-sensing performance of 2D WO3 nanostructures prepared by anodizing sputtered tungsten films. The thickness of WO3 nanosheets was found to reduce while the crystallinity degraded with increasing HNO3 concentration. However, the nanosheets anodized in 2 M HNO3 exhibited the highest response of 43.4 to 1 vol % H2, which was one order of magnitude larger than those fabricated with other concentrations at the optimal operating temperature of 350 °C. In addition, the optimal nanostructures displayed good H2 selectivity against NO2, CH4, C2H2 and C2H5OH.
