Nature Communications (Mar 2020)
Sub-nanosecond memristor based on ferroelectric tunnel junction
- Chao Ma,
- Zhen Luo,
- Weichuan Huang,
- Letian Zhao,
- Qiaoling Chen,
- Yue Lin,
- Xiang Liu,
- Zhiwei Chen,
- Chuanchuan Liu,
- Haoyang Sun,
- Xi Jin,
- Yuewei Yin,
- Xiaoguang Li
Affiliations
- Chao Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Zhen Luo
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Weichuan Huang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Letian Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Qiaoling Chen
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Xiang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Zhiwei Chen
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Chuanchuan Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Haoyang Sun
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Xi Jin
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Yuewei Yin
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
- DOI
- https://doi.org/10.1038/s41467-020-15249-1
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 9
Abstract
Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.
